| PART |
Description |
Maker |
| 2SA539 |
Low frequency amplifier. Collector-base voltage: Vcbo = -60V. Collector-emitter voltage: Vceo = -45V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 400mW.
|
USHA India LTD
|
| 2SA542 |
Low frequency amplifier. Collector-base voltage: Vcbo = -30V. Collector-emitter voltage: Vceo = -25V. Emitter-base voltage Vebo = -5V. Collector dissipation: Pc(max) = 250mW.
|
USHA India LTD
|
| 2SD1249 |
High collector-base voltage (Emitter open) VCBO
|
TY Semiconductor Co., Ltd
|
| 2SB852 |
Darlington connection for high DC current gain. between base and emitter.
|
TY Semiconductor Co., Ltd
|
| TIP105 |
Monolithic Construction With Built In Base-Emitter Shunt Resistors
|
SemiHow Co.,Ltd.
|
| HJ3669 HJ3953 |
Emitter to base voltage:3V 200mA NPN epitaxial planar transistor
|
Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectroni...
|
| TIP147F TIP145F TIP146F TIP147FTU |
PNP Epitaxial Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor Corporation
|
| MJ10007-D |
SWITCHMODE Series NPN Silicon Power Darlington Transistors with Base-Emitter Speedup Diode
|
ON Semiconductor
|
| TIP111 TIP110 TIP112 TIP112TU |
NPN Epitaxial Silicon Darlington Transistor
Monolithic Construction With Built In Base- Emitter Shunt Resistors
|
FAIRCHILD[Fairchild Semiconductor]
|
